SiC MOSFETs with a separate driver source
pin are available in 4-pin or 7-pin packages.
The 4- pin package is the TO-247-4L and is
designated by ROHM part numbers SCT3xxxAR
or SCT3xxxKR. The 7-pin package is the TO-263-
7L and is designated by ROHM part numbers
SCT3xxxAW7 or SCT3xxxKW7.
Figure 4: SiC MOSFET Package with Separate
Driver Source Pins
ROHM's new transistor gate
driver with galvanic isolation
(BM6112) is ideal for the
unique challenges of driving
SiC MOSFETs.
The BM6112 can drive high currents up to 20A, gate
voltages up to 20V, and do it all with an I/O delay of
less than 150ns max. And with an impressive set
of features and qualifications, including 3750VRMS
isolation, under-voltage lockout (UVLO), and short
circuit protection, this gate driver empowers the
designer to take full advantage of SiC MOSFETs.
Most traditional FET gate drivers are not capable of
directly driving SiC MOSFETs, so they require the
use of a buffer between the gate driver and the FET.
The BM6112, however, can directly drive single SiC
MOSFETs under most conditions. But when driving
power modules a gate drive buffer will almost always
be required.
The BM6112 is automotive qualified (AEC-Q100),
making it suitable for automotive, industrial inverter,
and uninterruptible power supply (UPS) system
applications.
27
High Current gate driver
