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| 4 | | 23 | Wolfspeed has also taken a significant step in the direction of serving a broader market by launching its power module business into the large-scale, commercial-volume space with a lineup of both industry-standard packages as-well-as new SiC- optimized packages. Furthermore, the company has positioned itself to provide SiC into mainstream, high-volume markets, such as the industrial, energy, transportation, and automotive segments. One Size Does Not Fit All The widespread adoption of SiC power modules requires various package sizes and device characteristics. The industry has historically used standard 45mm, 62mm and the even bigger EconoDUAL packages that are unable to take full advantage of the SiC technology. Competing SiC vendors often use packages initially designed to hold silicon (Si) devices without any design improvements to account for the benefits of SiC—which is akin to fitting a Ferrari engine into an old beat-up pickup. Simply put, an old pickup is just not optimized to take advantage of the power of a Ferrari engine. Wolfspeed can provide both the packages and die optimized to meet the benefits of SiC because of its vertically integrated model that enables co-development of new technologies to fit specific application spaces. When a module is specifically designed around the unique characteristics of SiC, it is capable of maximizing switching speeds, power density, and thermal performance. Taking the "not-one-size-fits-all" approach by offering both SiC-optimized footprints and standard legacy footprints, Wolfspeed's module portfolio provides unprecedented flexibility in package design that fits all types of different end-use applications. As you are about to discover, the new XM3 module platform, sized at 53mm, is a prime example of how Wolfspeed is setting the standard for SiC packaging. The XM3 Platform: Creating New Module Footprints Wolfspeed's XM3 full-SiC power module establishes a new standard footprint within the module market, with 50 percent less weight and volume than a standard 62mm module and industry-leading power density. This next-generation module has been optimized to accommodate all of Wolfspeed's commercially available C3M MOSFETs up to 1,700V. It can carry high currents up to 500A in a small 53mm x 80mm footprint. Various internal device configurations will be offered within the XM3 power module platform to accommodate different voltage and power demands across diverse applications. To reach high switching speeds with low switching losses, a package must be designed to achieve low stray inductance. This is a crucially important design philosophy in both the module and the system-level busbar design. The XM3 module beats the inductance of competitive legacy packages using a low-inductance, overlapping planar structure. The current loops within the module are wide, low profile, and yield even distribution between the devices, resulting in equivalent impedances across a switch position. The power terminals on the module are also vertically offset. This enables the design of simple bussing between the DC link capacitors and the module to be laminated up to the module without requiring bends, coining, standoffs or any complex isolation. The result is a power loop stray inductance of just 6.7nH at 10MHz— as demonstrated in the XM3 inverter reference design. The high current density enabled by SiC devices requires a high- performance thermal stack up to maximize heat transfer. The XM3's unique package design allows operation at a maximum junction temperature of 175°C. Other key features of the XM3 include an integrated temperature sensor on the low-side switch position; built-in voltage sensing (de-sat) connection for easy driver integration; and a high-reliability silicon nitride (Si3N4) power substrate to address demanding markets with enhanced power cycling capability. When compared to similarly rated Si IGBT power modules, the CAB450M12XM3 beats their performance with over 5x lower switching losses—at 800V and 400A the total switching loss, including reverse recovery loss, is less than 30mJ for an Wafer Fabrication XM3 Power Module

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