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C3M™ SIC 1200V MOSFETS
KIT-CRD-8FF65P EVAL BOARD
E-SERIES AEC-Q101 SILICON
CARBIDE MOSFETS
• Increased system
switching frequency
• High blocking voltage
with low On-resistance
• High speed switching
with low capacitances
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• Evaluates 650V SiC C3M™
MOSFET switching and steady
state performance
• Features two ADuM4121
MOSFET drivers
• SMA connectors located close
to each MOSFET allow for clean
VGS waveforms
• Experience SiC In Automotive or
Solar Applications
• AEC-Q101 Qualified and PPAP capable
• High-voltage, high-temperature, and
high-humidity resistance enables true
outdoor application for solar power
conversion and off-board charging
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MOSFETs
A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET),
as its name implies, operates as a field-effect transistor (FET).
A FET is a device that controls current flow by using an electric
field. The MOSFET usually has three terminals: gate (G), drain
(D), and source (S). The current conducted between the drain
and the source is controlled via a voltage applied to the gate.
Compared to other types of transistors, MOSFETs have a higher
power density, which is a definite advantage. Besides, compared
to BJTs (Bipolar Junction Transistors), MOSFETs require a
minimal amount of input current to control the load current.
Silicon carbide has quite a list of advantages over
silicon when used in semiconductor technology.
ADVANTAGES OF SIC OVER SI
• A higher critical breakdown field, which means a
voltage rating can be maintained while still reducing the
thickness of the device
• A wider bandgap, leading to lower leakage current at
relatively high temperatures
• A higher thermal conductivity, which supports a higher
current density
• An overall reduction in energy losses
USING SIC IN PLACE OF SI IN MOSFETS
ALSO RESULTS IN
• Reduced switching losses, which impact losses that
occur when the MOSFET is transitioning from blocking
to conducting (and vice versa)
• Higher switching frequencies, which means smaller
peripheral components (such as filters, inductors,
capacitors, transformers)
• Increased critical breakdown strength–approximately
10x what is achievable with Si
• Higher temperature operation, which means simplified
cooling mechanisms (such as heat sinks)
Modules
A module contains several power components, either MOSFETs
or Schottky diodes plus MOSFETs, properly interconnected
to perform a high-power conversion function. As electrical
applications, including power generation, energy storage and
transportation, require better performance, end-use designers
must use improved components. More compact, higher power
density, and high-temperature operating power modules will help
fuel the future of electric-powered systems.
