XM3 HALF-BRIDGE MODULES
62MM ALL-SILICON CARBIDE
HALF-BRIDGE MODULES
650V SILICON CARBIDE (SIC)
SCHOTTKY DIODE
• Implements third-generation
MOSFET technology with switching-
loss or conduction-loss optimization
• Terminal layout allows for direct
bus bar connection without bends
or bushings, allowing a simple, low
inductance design
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• Increased system efficiency due
to low switching and conduction
losses of SiC
• Aluminum nitride and silicon
nitride insulators minimize thermal
resistance while maintaining robust
CTE matching
• 650V Schottky rectifier
• 1.5V VF forward voltage
• 57A forward surge current
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manufacturers (OEMs) can easily demonstrate the efficiency of
their systems to a demanding marketplace.
Three characteristics–power density, thermal performance, and
conversion efficiency–are among the biggest challenges for
designers of power supplies. Also, designers need to meet these
challenges while minimizing overall system cost.
Traditional approaches to power supply design will continue
to provide some improvement in these areas. Still, gains will
be limited as developers have been focused on squeezing
more from these systems for years. To achieve significant
improvement, new approaches are required.
Silicon Carbide Delivers
Silicon carbide (SiC) is a wide bandgap semiconductor base
material. It can be used as a bare die substrate, in discrete
components such as Schottky diodes and MOSFETs, as well as
power modules.
Historically, silicon (Si) has been used as a semiconductor base
for the majority of electronics applications. However, Si is an
inefficient foundation for power supply systems when compared
to SiC. SiC offers many advantages over Si (Figure 1).
THE ADVANTAGES:
• SiC-based components have lower leakage currents
compared to their Si counterparts. This is because
electron-hole pairs generate slower in SiC than in Si,
resulting in lower leakage current losses when a switch
is off.
• SiC has a wide bandgap of 3 electron volts (eV)
and can withstand a voltage gradient over eight
times greater than Si without undergoing avalanche
breakdown. The increased critical breakdown strength
of SiC enables components to withstand a higher
Figure 1: Silicon carbide (SiC) offers many advantages over traditional silicon (Si).
(Source: Wolfspeed, A Cree Company)
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