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C h a p t e r 3 Addressing the many challenges that a designer can encounter when implementing GaN requires the correct choice of supporting circuitry around the GaN FET. In this context, gate drivers and magnetics play a significant role in the performance of a GaN-based power circuit. Gate drivers are the system components responsible for controlling power transistors' ON and OFF states. They serve as the interface between the low-power control signals and high- power switching devices, providing the necessary voltage and current to turn the transistors on and off efficiently. Because of the unique characteristics of GaN transistors, gate drivers play an even more critical role in GaN circuits than in Si-based circuits. GaN's lower gate drive voltage requirement demands precise control to avoid damaging the device and ensure optimal switching performance. This requirement is further confounded by GaN's faster-switching speeds, necessitating drivers that can also handle high-speed switching with minimal delay and distortion. Gate drivers for GaN circuits are specifically designed to address these unique needs. They often feature separate pull-up and pull-down circuits, allowing precise control over the gate voltage. GaN-specific gate drivers can also benefit from incorporating smart bootstrap switches to prevent overcharging and near-zero dead-time circuitry to minimize switching losses. GATE DRIVERS AND MAGNETICS Youssef Ezzaghari Professional Hardware Engineer, EDAG Group GaN FETs improve power management considerably by allowing for faster switching, lower conduction and crossover losses, and more effective heat management. This leads to improved efficiency, smaller systems, and reduced cooling requirements." 17 10 Experts Discuss Gallium Nitride Technology