To manage current spikes and common-
mode noises in GaN-based converters,
high-frequency transformers should
be designed with low common-mode
parasitic capacitance between
the windings. This design is more
challenging when design engineers
want to reduce proximity- and eddy-
effect losses by using interleaved
winding techniques."
Alireza Namadmalan
Senior Staff Research Engineer, Bourns, Inc.
Such features help to fully exploit the high-speed
switching capabilities of GaN transistors and achieve
maximum efficiency.
Another unique aspect of GaN drivers is the need
for real-time control features. Managing the rapid
switching speeds of GaN transistors without
introducing significant delays or errors
requires sophisticated control algorithms
and high-speed processing capabilities.
For this reason, gate drivers for GaN are
often accompanied by advanced digital
signal processors or microcontrollers.
Moreover, GaN gate drivers must
manage parasitic elements more
effectively than their Si counterparts.
The high switching frequencies of GaN
transistors can lead to significant voltage
spikes and oscillations due to parasitic
inductance. Therefore, the layout and design of
GaN gate drivers must minimize these parasitic
elements to ensure stable and reliable operation.
Beyond GaN gate drivers, designers
can use GaN controllers, which
C h a p t e r 3 | G a t e D r i v e r s a n d M a g n e t i c s
18
10 Experts Discuss Gallium Nitride Technology
