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C h a p t e r 3 | G a t e D r i v e r s a n d M a g n e t i c s have the DC/DC control logic and GaN FET Driver integrated into the same package. The benefit of a controller versus a discrete driver and control solution is higher integration, which reduces complexity and space requirements. The downside, however, is the inability to customize the system's DC/DC operation and the limited availability of single or dual outputs. Magnetic components, including inductors and transformers, are also key supporting elements in power electronics, used to store and transfer energy, filter signals, and manage voltage and current levels. However, GaN transistors operate at much higher frequencies than traditional Si devices, necessitating magnetic components that can handle these elevated frequencies without significant losses. These magnetic components require specialized designs and materials to ensure efficiency and reliability. For instance, GaN designers benefit from using advanced magnetic materials such as high-permeability ferrites and nanocrystalline alloys, which reduce core losses at high frequencies. These materials can handle the rapid changes in magnetic fields more efficiently than those typically used in Si circuits. One of the most significant challenges in designing magnetics for GaN circuits is minimizing core and copper losses. Core losses occur in the magnetic core material and increase with frequency. Therefore, GaN circuits require magnetic components with cores made from materials that exhibit low loss at high frequencies. Copper losses caused by resistance in the windings are also a concern and can be mitigated by optimizing winding techniques and using litz wire designed for the switching frequency of the application and with as high an efficient copper area as possible. In addition, the layout and physical design of magnetic components in GaN circuits significantly impact the circuit's performance. Segmented ferrite cores, for example, help to minimize core losses and improve efficiency. Youssef Ezzaghari Professional Hardware Engineer, EDAG Group GaN FETs are powerful but introduce new challenges. For example, they are very sensitive to stray inductance, meaning you must be extra careful in the layout and circuit design to avoid problems such as ringing and overshoot." 19 10 Experts Discuss Gallium Nitride Technology