C h a p t e r 1
GaN is a wide-bandgap semiconductor
material characterized by a bandgap
energy of 3.4 electron volts (eV),
compared to Si's narrower bandgap of 1.1
eV. This significant difference in bandgap
is a foundational factor that imparts GaN
with its superior electronic properties.
Specifically, with a wider bandgap, GaN
can operate at much higher voltages,
temperatures, and frequencies,
collectively making it highly suitable
for demanding applications in power
electronics, radio-frequency amplification,
and high-frequency digital circuits.
One of the most important material
properties of GaN is its intrinsically high
electron mobility, which can be up to 2000
cm²/V·s. With high electron mobility, GaN
transistors can switch on and off at greater
frequencies than their Si counterparts.
Faster switching speeds result in higher
power conversion efficiency and lower
energy losses, as GaN devices can
operate at higher frequencies without
significant performance degradation. As
an added benefit, the faster switching
capabilities of GaN devices enable the
use of smaller supporting magnetics such
as inductors, thereby minimizing space
requirements and achieving higher-power-
density solutions.
Moreover, GaN's high electron mobility
bestows GaN transistors with lower on-
resistance and reduced conduction losses
BENEFITS OF
GAN TECHNOLOGY
Marius-Petru Stanica
Principal Engineer, ABB
In an industrial power system,
the faster switching speed of
GaN versus silicon-based devices
may decrease the switchover
time between the main and the
redundant power supply. The higher
thermal conductivity may make the
power supplies more adaptable to
special environments."
7
10 Experts Discuss Gallium Nitride Technology
