Switching at very fast
frequencies makes parasitic
inductance a significant
challenge. If not carefully
managed, loop inductance
can cause gate drive voltage
spikes above safe levels,
leading to performance and
reliability issues."
Nixon Mathew
Marketing Manager, Analog Devices, Inc.
inductance to prevent gate drive voltage spikes that
could exceed safe levels. Therefore, careful layout
design is essential to minimize parasitic elements.
The higher switching frequencies enabled by
GaN also impact circuit design and component
selection. These frequencies allow for smaller passive
components such as inductors and capacitors but
demand that these components handle higher
current densities and thermal loads. At higher
frequencies, inductance values drop, increasing flux
ripple in the core and, consequently, core losses.
The careful selection of core materials and design is
needed to minimize these losses.
Thermal management is another area where GaN
differs significantly from Si. GaN's ability to operate
at higher temperatures is both an advantage and
a challenge. While generating less heat because
of higher efficiency, GaN devices can still operate
at higher temperatures. Effective heat dissipation
is therefore needed to maintain performance and
ensure longevity. GaN's higher power density also
C h a p t e r 2 | D e s i g n C h a l l e n g e s w i t h G a N v s . Tr a d i t i o n a l S i F E Ts
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10 Experts Discuss Gallium Nitride Technology
