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ADI & Bourns - 10 Experts Discuss Gallium Nitride Technology

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C h a p t e r 2 | D e s i g n C h a l l e n g e s w i t h G a N v s . Tr a d i t i o n a l S i F E Ts Key Points • GaN technology requires precise gate drive voltage control to ensure optimal performance and avoid device damage. • Managing high switching speeds in GaN devices necessitates minimizing parasitic inductance and capacitance to prevent performance and reliability issues. • High switching frequencies in GaN technology demand careful selection of passive components to handle higher current densities and thermal loads. • Analog Devices and Bourns accelerate the adoption of GaN technology in power electronics by offering extensive design collaterals and expertise to simplify the system design process. Evaluation Board for the LTC7891 GaN FET controller Trans-Inductor Voltage Regulator Inductor Learn More Learn More 16 10 Experts Discuss Gallium Nitride Technology

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