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C h a p t e r 2 | E n e r g y a n d D r i v i n g The STM32N6 can interface with and direct STGAP drivers, analyze power consumption in real time, and optimize the flow of energy to improve efficiency. The compatibility of an MCU and isolated driver also reduces the complexity of integration and reduces the number of components needed, promoting a more efficient design. GaN and SiC: Next-Generation Power Technologies Advanced materials help make designs even more compact. Manufacturing controllers using GaN and SiC enable devices that can switch faster, handle higher voltages, and operate at higher temperatures compared to traditional silicon. The higher power density capabilities of these materials allow more power to pass through a smaller footprint, which enables the controllers to be more compact. They also experience lower switching losses, To integrate industrial devices more effectively, smart factories must increase the energy consumption for continuous data monitoring and predictive maintenance. The IoT and the growing use of AI make reducing operational costs and optimizing energy usage even more important." Mark Davidsz Sr. Project Engineer, Rockwell Automation waste less energy as heat, and improve energy efficiency. GaN and SiC devices are ideal solutions for demanding applications in heavy machinery, but each is suited for different requirements: • GaN allows faster switching speeds and is more efficient for low to medium voltages, making it suitable for high- frequency, low-voltage applications. • SiC delivers lower switching losses at high voltages. While it is still capable of high switching speeds, it is better suited for low-frequency, high-voltage, and high-temperature use. STMicroelectronics' solutions in GaN and SiC, when combined with smart drivers like STGAP, allow designers to build power systems that are compact, efficient, and ready to help reduce the power needed in tomorrow's factory. 15 Autonomy Meets Intelligence: Enabling the Future of Factory Automation