Mouser Electronics White Paper
Figure 4: AESA systems are built around arrays of beamformer ICs and T/R modules. (Source: Qorvo)
integration with excellent thermal performance enabled by advanced
silicon processes, resulting in a beamforming IC. These beamforming
ICs pair with Qorvo's gallium nitride (GaN) front-end modules (FEMs)
to provide a compact and powerful solution for AESA systems.
GaN Technology and
Power Management
GaN transistors are widely used in X-band AESA radar because
they handle high power levels, broad bandwidths, and fast
switching speeds within compact assemblies. Higher power density,
however, increases heat buildup, making thermal management
critical for maintaining device reliability and stable performance.
In addition, GaN field-effect transistors (FETs) require precise gate-
bias control, and X-band radar systems must manage heavy pulse
loads during transmit mode. Qorvo ACT43750 power management
ICs (PMICs) simplify this task by automating gate-bias sequencing,
autocalibration, and dynamic bias recalibration for high-speed radar
systems.
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Additionally, by automating these functions, the PMICs
reduce thermal effects on radio frequency (RF) performance.
Front-End Module Design
in X-Band Systems
Arguably, the most critical part of an X-band radar or communication
system is the FEM. X-band FEMs typically integrate three
key components for optimal performance and efficiency:
• A T/R switch to manage the signal path
between transmitting and receiving modes
• A low-noise amplifier (LNA) to amplify weak received signals
• A power amplifier (PA) to increase
signal power for transmission
Respectively, these three components ensure efficient
operation, maintain signal integrity, and ensure strong signal
