Issue link: https://resources.mouser.com/i/1437744
ROHM's new SiC MOSFET packaging innovations add an additional pin to provide a driver source separate from the power source. In a traditional 3-pin FET, the electromotive force that occurs at the source pin due to the pin's inductance and the high load currents through the device effectively reduces the VGS seen by the transistor. This lower VGS inhibits the full turn-on of the transistor. Conversely, in the new devices with the separate driver source pin, that pin provides direct access from the gate driver to the internal transistor source. The inductance effects on the power source pin are thus avoided. Figure 3: Traditional 3 Lead MOSFET vs. New Package with Separate Driver Source Pin At the same time, SiC MOSFETs present new circuit design challenges. Most significantly, they require a high current gate drive to quickly supply the full required gate charge (QG). SiC MOSFETs exhibit low on-resistance only when driven by a recommended 18V to 20V gate to source (VGS) voltage, which is significantly higher than the 10V to 15V VGS needed to drive silicon MOSFETs or IGBTs. ROHM offers two complementary solutions for driving these SiC MOSFETs. The first is new package innovations in their latest SiC MOSFET devices. The second is a MOSFET gate driver device capable of driving up to 20A. Together, these ROHM solutions allow engineers to realize all the advantages that SiC MOSFET devices offer. The use of SiC semiconductor materials presents a leap forward in technology for MOSFET devices, and ROHM is leading the way. SiC MOSFETS are fast and support high voltages and temperatures. As such, they are poised to replace IGBTs in many applications, with faster operation, smaller size, and lower losses. But these benefits come with some challenges for which ROHM provides solutions. With the packaging innovation of adding a separate driver source pin and isolated gate driver ICs for driving the SiC MOSFET gates, designers can take full advantage of the SiC MOSFET benefits in their designs. 26 SiC moSFets with driver Source pin packaging innovation to Solve problems RoHm's Solutions to the Challenges of driving SiC moSFets