Behind The Mystery of Electromagnetic Compatibility Design 20
ANDREAS NADLER,
ELEAZAR FALCO,
EMIL NIERGES
WÜRTH ELEKTRONIK
Introduction
Wide bandgap power semiconductor devices, including Silicon
Carbide (SiC) MOSFETs, are enjoying growing popularity in many
modern power electronic applications such as E-mobility and
renewable energy. Their extremely fast switching-speed capability
helps to increase efficiency and reduce the overall system's size and
cost. However, fast switching together with high operating voltages
and increasing switching frequencies present important challenges
to the gate driver system. Rugged galvanic isolation, compliance with
safety standards, control signal noise immunity, and electromagnetic
interference (EMI) performance are just some of the most important
aspects to consider. An optimal design of the isolated auxiliary supply
providing the voltage and current levels to drive the SiC/Gallium
Nitride (GaN) device is critical to help the full gate driver system meet
the many requirements set by state-of-the-art applications.
Extremely Compact, Isolated
Gate Driver Power Supply for
SiC-MOSFET (6 - 10 W)
Compact Power Supply SMT Transformer
for SiC-MOSFET's
