Würth Elektronik 2022 25
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WE-UCF Universal
Common Mode Chokes
High-Power Auxiliary Gate
Drive Transformers
In addition to the controller (Analog Devices), the key component in
the design is the new power transformer (WE-AGDT-750318131). A
compact EP7 customized package was used and optimized to meet
the following requirements:
Summary
With the new transformer series WE-AGDT, Würth
Elektronik is demonstrating its innovative strength
addressing the future challenges in the power
electronics field. For the first time, the developer has the
possibility to easily implement a compact and efficient
gate driver supply with up to 6W output power capability
and top performance.
A comprehensive reference design document RD001 is available for
download (6W bipolar solution for SiC-MOSFET), alongside with the
corresponding PCB Layout design files.
Note that the power capability can be easily scaled to 10W with
an EP10 transformer core and appropriate uprating of some
components.
The new WE-AGDT Gate Driver Transformer series from Würth
Elektronik features six different transformers, each of them optimized
for different specifications and their own reference design. These
transformers offer flexibility, ease of use and a combination of bipolar
and unipolar output voltage rail options, covering the gate-drive
requirements of state-of-the-art SiC-MOSFETs and GaN-FETs and
widespread silicon IGBT and power-MOSFET devices.
■ Wide Input Voltage Range: 9-36V
■ High saturation current of 4.5A
■ Very low interwinding capacitance, typically 6.8pF
■ Very low leakage inductance for highest efficiency
■ SMD Pick and Place ready
■ Creepage and Clearance distance minimum 5mm
■ Safety Standard IEC-62368-1, IEC-61558-2-16
■ Basic Insulation
■ Dielectric Isolation minimum 4kV AC
■ Temperature Class B 155°C
■ AEC-Q200 Qualification
