C h a p t e r 3
Many different SiC offerings exist on
the market today. Therefore, to get the
most out of your SiC designs, you should
choose a supplier who can be a trusted
partner in your design process.
When choosing a partner, your first
consideration is whether they offer high-
quality SiC products.
High quality and reliability in SiC devices
begin with producing defect-free SiC
wafers. Defects can significantly impact
device performance by increasing leakage
currents, reducing breakdown voltage,
and compromising thermal conductivity.
Ultimately, the foundation of high-quality
and reliable SiC devices lies in overcoming
the material and process challenges
associated with producing pristine
SiC wafers that maintain the superior
electrical, thermal, and mechanical
properties of SiC. Overcoming these
challenges involves meticulous control
over the manufacturing process, from
substrate creation to epitaxial growth.
Following wafer production, the
development of devices with an optimal
oxide material is necessary. The oxide
layer serves as the gate dielectric in
MOS devices, playing a crucial role in
controlling device conductivity. Therefore,
optimizing the oxide material and its
CHOOSING THE RIGHT
SIC PARTNER
When choosing SiC products, on-
state resistance, gate charge,
reverse recovery charge, and
reverse recovery time are
important parameters to consider
for the application."
Jayaram Subramanian
High Voltage Systems Engineer,
Mercedes-Benz Research & Development North America, Inc.
17
Enabling a Sustainable Future with Silicon Carbide Power Electronics
