C h a p t e r 1
Within the changing power electronics
landscape, SiC is emerging as a favorite
material thanks to its exceptional
properties. The first property of note is
its high breakdown voltage.
Silicon carbide exhibits a 10x greater
dielectric breakdown field strength than
silicon. As a result, SiC power metal–
oxide–semiconductor field-effect
transistors (MOSFETs) can withstand
greater voltages, making them more
reliable and well-suited for high-voltage
applications like EVs or data centers.
Given SiC's greater breakdown voltage,
a SiC-based transistor can exhibit the
same blocking voltage as a silicon-based
transistor while in a much smaller form
factor because of a thinner drift layer.
In other words, SiC transistors can lead
to the downsizing of power systems,
requiring smaller components and less
board space.
An important result of this miniaturization
is increased device efficiency. With
thinner wafers, charge carriers must
travel shorter distances across the device
channel. SiC devices can be designed
with lower on-channel resistance than
their silicon counterparts, leading to
fewer internal resistance (IR) losses and
more efficient power systems.
SiC devices enable the design of smaller,
lighter-weight, more power-dense, and
UNDERSTANDING
THE SIC REVOLUTION
Bo Liu
ePowertrain Product Director, VReMT
For power electronics systems,
three characteristics need to
be considered: power density,
efficiency, and reliability. Thanks
to SiC's inherent material
advantages, SiC semiconductors
will always be superior to their
silicon counterparts."
6
Enabling a Sustainable Future with Silicon Carbide Power Electronics
