The fundamental advantages of SiC over
Si are higher breakdown voltage and high
thermal conductivity. Higher breakdown
voltage allows a thinner drift layer and
lower on-state resistance. This means
conduction losses are less, and overall
efficiency and power density
are improved."
C h a p t e r 1 | U n d e r s t a n d i n g t h e S i C R e v o l u t i o n
more efficient power systems than those of silicon-
based systems. Such design is extremely important
in applications like EVs, for which decreased system
weight directly translates into increased driving
range. Additionally, more efficient power systems
enable faster vehicle charging, greater utilization of
stored energy, and extended driving ranges.
Beyond the exceptional material properties of
SiC, recent manufacturing and device packaging
advances are also catalyzing its adoption.
Modern advances in SiC wafer fabrication have
created wafers with lower defect content, making
SiC more affordable and reliable for end users.
Additionally, new packaging is enabling SiC to gain
widespread adoption. SiC boasts superior thermal
conductivity (about 3 to 4.9 W/cm·K) compared to
silicon (about 1.5 W/cm·K), necessitating packaging
materials and techniques that can do the same.
Recent innovations such as top-side and double-
sided cooling packages enable SiC devices that can
support greater temperatures and current densities
than previously.
Jayaram Subramanian
High Voltage Systems Engineer, Mercedes-Benz Research & Development North America, Inc.
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Enabling a Sustainable Future with Silicon Carbide Power Electronics
