C h a p t e r 2
While GaN offers many benefits for power
systems, harnessing these benefits
requires properly implementing the
technology. However GaN technology
introduces several design complexities
not typically encountered with Si field-
effect transistors (FETs).
One of the primary challenges is the
need for precise control of gate drive
voltage. GaN devices require lower gate
drive voltages—often around 6V, in
contrast to Si's 15–20V maximum rating.
Therefore, ensuring precise control
within this narrow margin is necessary for
optimal performance and avoiding device
damage, as insufficient drive voltage
can prevent GaN from achieving its full
efficiency potential.
Another significant challenge is managing
the high switching speeds that GaN
enables. While a key benefit, these speeds
increase the risk of parasitic inductance,
capacitance, and switching losses. The
fast-switching transitions of GaN devices
can lead to high-frequency oscillations
and noise, which can compromise
performance and reliability. Similarly, fast
switching also requires minimizing loop
DESIGN CHALLENGES
WITH GAN VS.
TRADITIONAL SI FETS
Eduardo Eslava
Senior Hardware Design Engineer, Dana Incorporated
As a relatively new technology,
GaN still lacks good models to
predict reliability and life cycle
estimation under electrical
transient conditions (stress)."
12
10 Experts Discuss Gallium Nitride Technology
