Issue link: https://resources.mouser.com/i/1537950
Thermal Balance in Parallel Operation Apart from having a tight parameter distribution, CoolSiC™'s lower negative temperature coefficient (αVGS(th)) provides better stability. Application tests comparing parallel operation show that CoolSiC™ devices with a 9°C temperature difference outperform planar devices with a 26°C difference. This improved thermal stability reduces derating requirements and ensures more reliable parallel performance, allowing for higher power density designs. Robustness Features: Designing for the Unexpected 200°C Overload Capability Generation 2's ability to operate at 200°C (qualified for 100 hours) offers greater design flexibility. Since nearly every application encounters overload events, this capability provides real benefits. In UPS applications experiencing output short circuits, the 200°C rating allows for 6% higher output power. For applications with overload-limited dimensioning, this improvement compounds with electrical and thermal enhancements, reducing the cost per ampere. Immunity to Parasitic Turn-On While parasitic turn-on (PTO) can cause catastrophic shoot-through events in many SiC technologies, CoolSiC™ shows exceptional immunity to this phenomenon. Half-bridge testing with dV/dt rates up to 80V/ns indicates that Generation 2 can operate at much higher gate resistance values before experiencing PTO. This robustness allows operation with a 0V gate-source voltage during off-states, simplifying gate drive design without sacrificing reliability. Short-Circuit and Avalanche Protection Unique among SiC technologies, CoolSiC™ provides a guaranteed short-circuit withstand capability: 2 microseconds of guaranteed withstand time (as specified in the datasheet) and a full avalanche ruggedness rating. These features improve system robustness for applications where devices might face fault conditions. Conclusion: A Holistic Advancement Generation 2 CoolSiC™ devices in TO247 4-pin high creepage packages provide more than just incremental improvements—they deliver comprehensive enhancements across every parameter. With a 25% reduction in switching losses, a 30% improvement in thermal resistance, better paralleling ability, and strong fault tolerance, these devices address real-world challenges while remaining easy to implement. The combination of electrical performance, thermal management, innovative mechanical design, and innate robustness creates a technology platform that not only simplifies system design but also enables engineers to push the boundaries of power density and efficiency. Whether replacing existing devices or designing new systems, Generation 2 offers all the features needed for successful deployment in demanding industrial applications. C h a p t e r 2 | E l e c t r i c a l a n d T h e r m a l P e r f o r m a n c e o f 1 2 0 0 V C o o l S i C ™ M O S F E T G 2 i n T O - 2 4 7 - 4 H C P a c k a g e 11 Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes