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Electrical and Thermal Performance of 1200 V CoolSiC™ MOSFET G2 in TO-247-4HC Package Chapter 2 Generation 2 Portfolio Overview The transition from Generation 1 to Generation 2 CoolSiC™ devices in the TO247 4-pin package marks a significant advancement in power semiconductor technology. This chapter discusses how Generation 2 builds on its predecessor's foundation to deliver improved performance in several areas. Generation 1 started with standard soft soldering in a conventional package and later adopted .XT interconnection technology with an optimized pinout featuring thinner gate and Kelvin pins. Generation 2 enhances these features further by adding a wider creepage distance of 9mm and expanding the RDS(on) range from 78 milliohms to just 7 milliohms. It also provides a 15% better price-performance ratio while reducing switching losses, improving thermal resistance, and increasing gate-source voltage capability. Performance Enhancements At the core of Generation 2's progress is its optimized switching performance. The technology shows a 25% reduction in switching losses compared to other SiC technologies, which directly results in lower overall power losses and higher system efficiency. This improvement is evident when analyzing measured switching transients. Under identical operating conditions—same current, voltage, and temperature— and with dV/dt fixed by adjusting external gate resistance, Generation 2 demonstrates faster di/dt transients than Generation 1, leading to reduced turn- on (Eon) energy losses. Additionally, when operated at the same external gate resistance, Generation 2 achieves both faster di/dt and dV/dt transients, significantly reducing switching energy losses. Thermal Excellence Through .XT Technology The switching improvements are enhanced by superior thermal management through .XT interconnection technology. This die attach method uses diffusion soldering, in which the die bonds to the leadframe under high temperature and pressure, eliminating the traditional solder joint. While standard soldering creates a thick interfacial layer, .XT technology removes this thermal bottleneck. The results are impressive: • 30% increase in thermal resistance compared to Generation 1 standard soft-solder devices • 7% increase even against Generation 1 diffusion- solder devices • 15% lower RTH for devices with similar RDS(on) in the same package 7 Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes