Technology Overview and Evolution
of the 1200 V CoolSiC™ Technology
Chapter 1
Trench Design and Technology Foundation
Central to Infineon's CoolSiC™ technology is
its innovative trench design. This architecture
solves a long-standing challenge for power
semiconductor designers—balancing
performance, robustness, and reliability. By
maximizing efficiency while ensuring device
longevity, the trench design sets CoolSiC™ apart
in the silicon carbide industry.
What makes this design notable is its gate oxide
reliability. Infineon's CoolSiC™ trench design
achieves gate oxide reliability, which directly improves
performance in real-world applications. This means
devices that not only perform better but also last
longer under demanding conditions.
4
Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes
