Issue link: https://resources.mouser.com/i/1537950
Additionally, the technology addresses a common challenge in power electronics: parasitic turn-on. CoolSiC™ devices are resistant to these unwanted switching events because of their higher gate-source threshold voltage as well as the improved ratio of CGD and CDS capacitances. This allows engineers to operate the device at a gate-source voltage turn-off of 0 volts, removing the need for negative gate voltages and making system design and integration easier. Technology Evolution of CoolSiC™ from G1 to G2 Industrial Lead Type Establishing the Foundation The CoolSiC™ journey began with M1 technology, showing that a trench-based design could deliver both high performance and dependability. Not only did this first generation meet expectations, but it also set new standards with its strong short-circuit capacity and a carefully optimized gate oxide for a Vgs(on) of 15V at the rated RDS(on). Additionally, M1 introduced dV/dt controllability, enabling precise management of switching behavior. Coupled with its resistance to parasitic turn-on, these C h a p t e r 1 | T e c h n o l o g y O v e r v i e w a n d E v o l u t i o n o f t h e 1 2 0 0 V C o o l S i C ™ T e c h n o l o g y features created a reliable foundation that would shape the platform's future. Pushing Performance Boundaries While M1 established reliability, the market demanded even higher performance. The M1H technology responded to this challenge by building on all of M1's benefits while pushing a boundary: the gate oxide optimization. By engineering the gate oxide to operate reliably at Vgs of 18V instead of 15V, M1H unlocked additional performance improvements. This 3-volt increase may seem modest, but it represents a significant advance in the technology's capabilities, enabling lower losses and higher efficiency while preserving the robustness that contributed to M1's success. M2H: Achieving Cost-Performance Improvement With proven performance and reliability, the next challenge was clear: making the technology accessible for broader market adoption. M2H technology directly addresses this by implementing strategic optimizations aimed at improving cost-performance. By reducing cell pitch and refining the doping profile, M2H boosts device performance in two key areas: switching characteristics and thermal efficiency. These improvements are achieved without sacrificing robustness or reliability, which remain consistent with earlier versions. A Platform Built for Progress The evolution of CoolSiC™ technology follows a clear strategy: build a solid foundation, improve performance where it matters most, and refine for practical application. Through this structured approach, Infineon has developed not just a single product but a platform that continuously adapts to market needs, always keeping the core benefits of the trench design while enhancing performance and value. 5 Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes