Issue link: https://resources.mouser.com/i/1538715
C h a p t e r 2 WIDE BANDGAP AT WORK—SIC AND GAN DRIVE THE FUTURE As vehicle designers strive for greater efficiency and power handling capabilities, wide bandgap (WBG) semiconductors have become critical. WBG semiconductor materials, such as the popular silicon carbide (SiC) and gallium nitride (GaN), have completely reimagined the design space for vehicle electrification. These materials offer higher breakdown voltages, faster switching speeds, and superior thermal conductivity compared to traditional silicon, all of which have been a major boon for high-efficiency, high-power- density automotive systems. But the same traits that make WBG devices attractive place significant stress on surrounding passive components. For example, WBG semiconductors generate steeper switching edges and operate at much higher frequencies, often in the range of hundreds of kilohertz or even megahertz. While this improves overall system efficiency and allows for smaller magnetics, it places significant stress on surrounding passives. Capacitors must manage sharp dv/dt transitions and high ripple currents, and inductors must maintain inductance and thermal stability while filtering broadband noise. GaN and SiC technologies enable higher switching frequencies and voltage levels, significantly increasing dv/dt stress on passive components. This necessitates tighter PCB layouts, improved EMI mitigation, and high-grade capacitors and magnetics with enhanced thermal and voltage endurance." Touship Patil Hardware Design Engineer, Continental 12 Powering the New Automotive Era with Smart Passive Solutions