Issue link: https://resources.mouser.com/i/1537950
These larger distances ensure more reliable and easier heatsink assembly, especially important for high- voltage applications. Pin Holder Technology: Simplifying Assembly Unlike traditional packages with exposed metal "mold ears," Generation 2 features pin holder design, which increases creepage distance between mounting screws or clips and the exposed die pad (at drain potential), simplifying the mounting process while improving electrical isolation. The thinner gate and Kelvin pins prevent solder bridging during assembly, a common manufacturing issue that can lead to field failures. Proven Performance in Real Applications Solar Inverter Performance The true test of any technology is how it performs in real-world applications. In solar PV inverters that use boost topology (which is common in MPPT stages), comparative measurements highlight the benefits of Generation 2: At a switching frequency of 60 kHz, Generation 2 runs 9°C cooler than Generation 1 during 10kW operation. When the frequency rises to 80 kHz, C h a p t e r 2 | E l e c t r i c a l a n d T h e r m a l P e r f o r m a n c e o f 1 2 0 0 V C o o l S i C ™ M O S F E T G 2 i n T O - 2 4 7 - 4 H C P a c k a g e Generation 2 remains 13°C cooler than Generation 1. Increasing the switching frequency by 20 kHz causes only a 7°C temperature rise in Generation 2 as opposed to 11°C in Generation 1. Half-Bridge Topology Results Half-bridge configurations, the foundation of most power conversion stages, operate as synchronous buck converters. Generation 2 demonstrates: • Increased efficiency across the entire operating range • Reduced temperatures for high-side switching and low-side synchronous rectification devices These improvements in switching and thermal performance directly result in higher system efficiencies and lower operating temperatures. Mastering Parallel Operation: A Critical Design Challenge Understanding the Paralleling Challenge Paralleling SiC devices presents inherent challenges due to variations in device parameters and layout asymmetries. Three key parameters influence current sharing: Vgs threshold, the most critical for dynamic current sharing; transfer characteristic, which affects current distribution during transitions; and RDS(on), which features a positive temperature coefficient that naturally helps balance steady-state currents. The challenge increases because the Vgs threshold has a negative temperature coefficient. When devices have mismatched thresholds, the device with the lower threshold turns on earlier, carries more current, experiences higher losses, and reaches higher temperatures. This temperature increase further lowers its threshold, creating a destructive positive feedback loop that can lead to device failure. CoolSiC™'s Statistical Advantage A comparative analysis of Vgs threshold distributions demonstrates CoolSiC™'s superiority. While all technologies experience some manufacturing variation, CoolSiC™ maintains tight parameter control, with most devices clustering around the typical threshold value. Other trench-based technologies exhibit wider distributions, while planar technologies show the greatest variation. This advantage stems from the trench cell design's inherent resistance to process variations. 9 Enabling Compact, Efficient Designs with High Voltage CoolSiC™ Discretes