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Microchip - Silicon Carbide Power Solutions

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temperature coefficient, which makes them easier to parallel; our customers have paralleled up to 48 Microchip devices. Secondly, the intrinsic body diode of Microchip's SiC devices does not degrade with use, eliminating the need for an external free-wheeling diode. The resilience of SiC devices against avalanche stress also removes the need for protective components (e.g., snubbers). The third cost reduction comes from the smaller system size made possible with SiC. Even though the cost of an individual SiC device is greater than that of its Si counterpart, the size reduction (typically by two to three times) results from smaller passives, heat sinks, and printed circuit boards (PCBs). Considering that heat sinks are large pieces of metal, smaller heat sinks cost significantly less. To help designers further reduce system costs, Microchip offers SiC devices with a wide range of power, current, and voltage ratings. This way, designers only pay for what they need while minimizing the overall design size. Microchip's SiC devices come in various packages and in bare die form to facilitate all kinds of power applications. Microchip offers technical support for the whole system (digital, mixed signal, analog, and power) to help customers at every stage of SiC integration, from initial schematics to application deployment. This support reduces engineering development time and accelerates time to market. In my opinion, a design switching to SiC will face a decrease in the final project cost. Increasing the frequency operation of converters, reducing switching losses, and improving the total efficiency reduce the size of the PCB, passive components, heatsink, and cooling components." C h a p t e r 2 | L o w e r i n g S y s t e m C o s t w i t h S i C Kasra Latifi Fard Power Electronic Design Engineer, NanoStructured Coatings 12 Silicon Carbide Power Solutions

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