Naveed ur Rehman Malik
Motor Drives Engineer, Dyson
C h a p t e r 2
One of the biggest challenges
faced with SiC devices is their
higher cost relative to Si devices,
often giving the impression that
SiC designs are more expensive.
However, considering the benefits
that SiC can bring to high-
power applications, SiC can
reduce not only design costs
(through reduction in the size of
passive components, operation
at higher temperature, and
removal of redundant parts) but
also development costs when
SiC is used in conjunction with
Microchip's SiC digital gate drivers
and development kits (see Chapter
3 – SiC Speed to Market).
The first factor making Microchip's
SiC the lowest system cost
is the unrivalled ruggedness
and performance provided by
Microchip's SiC devices. Microchip's
SiC metal–oxide–semiconductor
field-effect transistors (MOSFETs)
have a lower increase in R
DS(on)
as the temperature increases,
meaning fewer devices are
needed in parallel to meet power
system requirements. Additionally,
SiC devices have a positive
LOWERING SYSTEM COST
WITH SiC
As SiC can withstand higher
temperatures, the reliability and lifetime
of the device is far greater compared
to Si which in turn will reduce the cost
in the long run use. As SiC devices can
withstand higher temperatures, smaller
and lighter cooling systems can be used
resulting in considerable cost savings."
11
Silicon Carbide Power Solutions
