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C h a p t e r 4 LOWER RISK When determining the risks associated with a design, designers can easily focus on the devices being used. However, projects can be affected by various factors, ranging from geopolitical relationships and supply chains to government legislation. With a robust body diode, flatter R DS(on) curve , and long oxide lifetime (exceeding 100 years), Microchip's SiC devices are less likely to fail during nominal operation. Long-term tests on Microchip's SiC devices at extreme temperature and voltage conditions demonstrated you can be confident in the routine, reliable operation of your power conversion system for the designed service lifetime and beyond. Furthermore, high-power designs that require multiple devices in parallel see reduced risk from using Microchip's SiC devices because of their easy paralleling and high ruggedness and performance. Every component used in a circuit comes with a small chance of failure; thus, as more components are included, the likelihood of failure increases. By using fewer components (no redundancy or snubbers) and ensuring high reliability, Microchip creates SiC designs that can be trusted. The global pandemic that began in 2020 demonstrated the importance of semiconductors and the industry's vulnerability to supply chain challenges. Thousands of commonly used devices The lower loss profile and higher maximum junction temperature (up to 175C) for SiC devices make them an ideal choice for demanding applications. Their cosmic ray failure rate (single event breakdown, SEB) is also improved due to the lower chip surface." Jerome Gregoire eDrive Leader and Principal Power Electronics Engineer, Ascendance Flight Technologies 19 Silicon Carbide Power Solutions