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GaN GaN power devices surpass traditional silicon technologies with enhanced efficiency, reduced switching losses, and higher speed. GaN's superior performance and robustness are revolutionizing power electronics in applications like EV chargers and industrial automation. The adoption and popularity of gallium nitride (GaN) power electronic devices—specifically field-effect transistors (FETs) and high electron mobility transistors (HEMTs)—continue to accelerate. This popularity can be attributed to the resulting enhanced system-level efficiency and robustness that GaN devices deliver as replacements for silicon (Si) metal-oxide field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs). At higher frequencies, GaN even offers better power electronics figures-of-merit (FOM) than other wide bandgap semiconductors, such as silicon carbide (SiC). Benefits Compared to MOSFETs and IGBTs, GaN and SiC devices feature significant improvements for many power electronic applications due to lower gate capacitances and reduced gate drive losses. For example, GaN devices feature a gate charge FOM lower than 1nC- Ohm versus 4nC-Ohm for Si. Moreover, wideband semiconductors like SiC and GaN have lower output capacitance than Si, which means that overall switching losses are reduced even at higher switching rates. This results in faster switching speeds and lighter, less expensive magnetics (such as inductors and transformers). For instance, GaN devices' output charge FOM of 5nC-Ohm is roughly one-fifth that of Si. Though at lower frequencies, IGBT, MOSFET, and SiC devices can presently handle higher power levels than GaN FETs and HEMTs, as GaN technology matures, those devices are starting to achieve voltage levels similar to what SiC can manage at much higher speeds. GaN is quickly becoming the technology of choice for all but the highest voltage levels, which are still dominated by incumbent Si IGBT and MOSFET solutions. GaN technology is rapidly gaining market share due to its high power density and ability to operate efficiently at high frequencies. GaN offers high electron mobility, 3.4eV wide bandgap, and superior switching FOMs compared to Si and SiC. This means that a high-voltage power system can be made at lower system costs, have better thermal distribution, feature a higher system density, and deliver better overall efficiency in a smaller, more rugged package. Specifically, GaN demonstrates better reverse recovery, lower dead-time losses, and better switching speed. Applications and Growth The benefits of GaN technologies are well on their way to revolutionizing power electronics. Higher power density in smartphone, tablet, and portable electronics chargers is just the tip of the iceberg. GaN electronics are now being used to fuel the electrification revolution with more efficient and reliable electric vehicle (EV) chargers, industrial automation controllers, motor controllers, and a diverse range of other applications. Though GaN wafers are roughly 10 times the cost of SiC wafers and 100 times that of Si, 1 by using GaN-on-Si, GaN-on-sapphire, GaN-on-SiC, or other semiconductor-on-insulator technology, the overall cost of GaN devices can be reduced while also potentially enhancing certain performance criteria. For instance, GaN demonstrates lower thermal conductivity than SiC, but GaN grown on SiC benefits from the high thermal conductivity of SiC while providing higher power density and switching speeds compared to SiC. Conversely, GaN-on-Si is much less expensive than other GaN technologies while still providing a wide range of performance benefits for power electronics compared to Si. Confidence in GaN technology continues to penetrate the legacy market, and growth in overall market share is high. Yole Intelligence predicts a 46 percent compound annual growth rate (CAGR) for GaN from 2023 to 2029, with the largest growth sectors being mobile, consumer, automotive, and mobility industries. 2 GaN for Next-Gen System Efficiency and Robustness By JJ DeLisle for Mouser Electronics Adobe Stock / knssr – stock.adobe.com 7 Advanced Power Solutions for Efficiency and Robustness | ADI