Another example is the Analog Devices LT8418 half-bridge
GaN driver, which functions as a 100V device with integrated
protections, driver logic control, and top and bottom driver stages.
The LT8418 can be configured to operate as a synchronous half-
bridge or full-bridge topology or even buck, boost, or buck-boost
topologies. Other features include split gate drivers to adjust
turn-on/off slew rates for ringing suppression and optimized EMI
performance and low-state default drivers to avoid false turn-on of
GaN FETs.
Conclusion
Wide bandgap semiconductor technologies have been growing in
maturity and capability over the past several years, and demand
for these devices is driving research and development efforts.
In particular, GaN technologies have begun making inroads into
many markets as these devices can exhibit higher power densities
at higher frequencies than Si and SiC technologies. Though GaN
devices are still at a cost premium compared to Si and SiC, larger
wafer sizes and more mature processes will likely lead to wider
GaN adoption across many markets as GaN device performance is
enhanced and costs lower.
1
https://doi.org/10.5772/60970
2
https://www.yolegroup.com/strategy-insights/power-gan-harnessing-new-
horizons/
Analog Devices LTC7890/LTC7891
synchronous step-down controllers for
GaN FETs include many features that
mitigate the challenges of working with
GaN FETs in power device design.
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Adobe Stock / amazing studio – stock.adobe.com
LT8418 Half-Bridge
GaN Driver
Learn More
LTC7890/1 Synchronous
Step-Down Controllers
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9
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