Issue link: https://resources.mouser.com/i/1518066
C h a p t e r 1 | S i v s . S i C Consisting of silicon and carbon arranged in a crystalline structure, SiC offers a significantly wider bandgap (approximately three times that of Si). This wider bandgap has a breakdown field 10 times greater than that of Si, allowing SiC transistors to withstand greater voltages (even those of insulated-gate bipolar transistors), to offer more than three times better thermal conductivity, and to attain much higher switching speeds. Additionally, compared to Si devices, SiC devices have lower R DS(on) values, enabling higher drain-source currents and lower heat generation. As such, SiC dies have much faster turn-on and turn-off times, resulting in lower energy losses during switching (lower switching losses) and facilitating increased switching speeds (SiC will commonly see switching speeds of around 100 kHz to 150 kHz). The high- speed capabilities of SiC are essential when you work with switched power supplies for which the speed of switching greatly influences overall system size and efficiency. The high-speed operation of SiC compared to Si also supports higher- frequency power applications such as inductive heating, in which frequencies can easily exceed 400 kHz. Even though SiC devices are more efficient than Si devices, SiC is typically chosen for applications with power exceeding 3 kW and voltages above 600 V. That's not to say SiC cannot be used for lower-power applications; some engineers have used SiC for low-power applications (less than 100 W) like axillary flyback converters. Priyanka Yussuf Hardware Design Engineer, Schneider Electric SiC devices offer higher switching frequencies than Si and can withstand higher temperatures and breakdown voltages. They also have greater efficiency through lower on-state conduction losses. Overall, they can be used to make smaller, more efficient power products." 7 Silicon Carbide Power Solutions