Peter Friedrichs

Peter Friedrichs did his Ph.D. work at the Fraunhofer Institut FhG-IIS-B in Erlangen. His focus area of expertise was the physics of the MOS interface in SiC power MOSFETs. Peter joined Infineon on April 1, 2011 and is Vice President of SiC. He is a European Center for Power Electronics (ECPE) board member and the JEDEC JC70.2 committee co-chair. He has numerous SiC power devices and technology patents. He is also an author or co/author of more than 50 scientific papers and conference contributions.

about 4 years ago
What Are the Benefits and Use Cases of SiC MOSFETs?

(Source: Andrei Kuzmik/Shutterstock.com) Silicon carbide transistors are increasingly used in high-voltage power converters as they can meet the stringent requirements regarding size, weight,...

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