From the Field to the Cloud

UWB possibilities for IoT are not just about networks, but also real-time athletic performance data.

SiC Modules Accelerate High Power Energy Infrastructure Design

Silicon Carbide MOSFET modules enable smaller, thermally optimized EV charger designs.

Texas Instruments Wide Bandgap Solutions

(Source: Ivan Kmit – adobestock.com) It All Started with a Calculator When I was in high school and college, the ever-present tool I used as a fledging engineer was the Texas Instruments (TI)...

How WBG Is a Step Toward Efficiency Being “1”

(Source: Littelfuse) As a mountain bike enthusiast, I take calculated risks. For me to improve, I must push myself to jump over obstacles more quickly, increase my speed, and cut corners tighter...

Maximizing Power Density in High Voltage Converters Using Wide Bandgap Technology

(Source: STMicroelectronics) Increasing power density and shrinking power supplies are nothing new. This trend is projected to continue, enabling new markets, applications, and products. This...

What Are the Benefits and Use Cases of SiC MOSFETs?

(Source: Andrei Kuzmik/Shutterstock.com) Silicon carbide transistors are increasingly used in high-voltage power converters as they can meet the stringent requirements regarding size, weight,...

The Wide Bandgap Road to Automotive Power Electronics

For HEVs, lower voltage rating power semiconductor devices, such as SiC MOSFETs, benefit by offering an efficient, low-cost power conversion solution.

Mind the BandGap - It's Gotten Wider!

Power converters are the link between energy sources and the end application, and every watt lost in them is wasted money and contributes to global warming. However, the latest wide-bandgap...

Why SiC Devices Are Ideal for Level 3 EV Charging Applications

Charging an EV can be a lengthy process, however, Level 3 "fast� DC charging techniques promise much faster charging capabilities that reduce charging

Move Over LEDs, Electric Motors Will Save the Planet

LEDs save energy, but efficient electric motors can save much more. Now a new generation of GaN transistors promises new power-supply breakthroughs to

GaN HEMTs Power Electric Motor Reform

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are replacing silicon metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs)...

SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs

Switching devices-both transistors and diodes-based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far

GaN: Gaining Traction, But Still Short of Fulfilling Its Promise in Power Electronics

If vertical GaN is to gain market acceptance in a big way, improvements will be needed in a number of areas to scale up production and bring down prices.

Wide Bandgap Semiconductors Tackle Tomorrow's Systems

SiC of GaN? Wide-Band Gap RAP Session APEC Day 1

Your intrepid reporter, a veritable APEC ing©nue, felt compelled to take part in the long-held tradition at APEC: Three concurrent RAP sessions closed

RF Power: GaN Moves In for the Kill

Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to...

APEC 2014- Download the Presentations Today

Nearly 4000 power professionals and knowledge-seekers converged at the Fort Worth Convention Center in March for the twenty-ninth annual IEEE Applied

GaN the Giant Killer?

Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been m

Efficient and Reliable High Voltage Switching

Low static and dynamic losses as well as the integration of a body diode are key features which will prove revolutionary for application topologies relying on hard switching with continuous body...