Endpoint UWB Powers Secure, Spatially Aware Devices
Endpoint UWB is reshaping embedded design with secure ranging, RTLS, and low‑power radar. Explore how new standards and Qorvo’s QM35825 SoC enable next‑generation spatially aware devices.
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Endpoint UWB is reshaping embedded design with secure ranging, RTLS, and low‑power radar. Explore how new standards and Qorvo’s QM35825 SoC enable next‑generation spatially aware devices.
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Explore how eVTOL noise, megawatt charging, and safety standards shape urban air mobility designs.
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Radiation‑hardened GaN RF technology boosts LEO satellite performance with high efficiency, reliable 5G/6G links, and robust power management for space‑grade communication systems.
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Microcontrollers may be able to perform complex calculations, but when it comes to delivering the results of those calculations to the electrical motor, a power delivery system is required.
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Explore the fundamentals of RF technology, how it powers communication, sensing, and navigation, and why it's essential to engineering.
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SiC and GaN are currently dominating the high-power and high-frequency markets and will likely continue to compete and develop in the coming years.
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UWB possibilities for IoT are not just about networks, but also real-time athletic performance data.
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Silicon Carbide MOSFET modules enable smaller, thermally optimized EV charger designs.
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(Source: Ivan Kmit – adobestock.com) It All Started with a Calculator When I was in high school and college, the ever-present tool I used as a fledging engineer was the Texas Instruments (TI)...
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(Source: Littelfuse) As a mountain bike enthusiast, I take calculated risks. For me to improve, I must push myself to jump over obstacles more quickly, increase my speed, and cut corners tighter...
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(Source: STMicroelectronics) Increasing power density and shrinking power supplies are nothing new. This trend is projected to continue, enabling new markets, applications, and products. This...
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(Source: Andrei Kuzmik/Shutterstock.com) Silicon carbide transistors are increasingly used in high-voltage power converters as they can meet the stringent requirements regarding size, weight,...
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For HEVs, lower voltage rating power semiconductor devices, such as SiC MOSFETs, benefit by offering an efficient, low-cost power conversion solution.
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Power converters are the link between energy sources and the end application, and every watt lost in them is wasted money and contributes to global warming. However, the latest wide-bandgap...
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Charging an EV can be a lengthy process, however, Level 3 "fast� DC charging techniques promise much faster charging capabilities that reduce charging
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LEDs save energy, but efficient electric motors can save much more. Now a new generation of GaN transistors promises new power-supply breakthroughs to
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Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are replacing silicon metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs)...
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Switching devices-both transistors and diodes-based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far
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If vertical GaN is to gain market acceptance in a big way, improvements will be needed in a number of areas to scale up production and bring down prices.
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